A proposal of a parallel resistance model for the conduction mechanism of binary transition metal oxide ReRAM

被引：0
|
作者：
Kinoshita, Kentaro [1 ]
Noshiro, Hideyuki [1 ]
Yoshida, Chikako [1 ]
Sato, Yoshihiro [1 ]
Aoki, Masaki [1 ]
Sugiyama, Yoshihiro [1 ]
机构：
[1] Fujitsu Labs Ltd, Embedded Memories Dev Dept, Atsugi, Kanagawa 2430197, Japan
来源：
MATERIALS AND PROCESSES FOR NONVOLATILE MEMORIES II | 2007年 / 997卷
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A parallel resistance model (PRM), in which the total resistance, R-total, is given by a parallel connection of resistance of a filament, R-fila, and that of a film excluding a filament, R-excl, was proposed to understand DC. electric properties of resistive RAM (ReRAM). Here, the relationship of 1/R-total = 1/R-fila + 1/R-excl is satisfied. To prove the validity of this model, the dependence of the relationship between resistance and temperature, R(T), of Pt/NiO/Pt on an area of a top electrode, S, was investigated. It was clarified that R(T) depended on S, which is the result definitely expected by the PRM. It was also clarified that smaller S is crucial to observe intrinsic properties of a filament of ReRAM.
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页码：211 / 217
页数：7
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