Towards imaging with polycrystalline mercuric iodide semiconductor detectors

被引：20

作者：

Schieber, M ^{[1
]}

Zuck, A ^{[1
]}

Braiman, M ^{[1
]}

Melekhov, L ^{[1
]}

Nissenbaum, J ^{[1
]}

Turchetta, R ^{[1
]}

Dulinski, W ^{[1
]}

Husson, D ^{[1
]}

Riester, JL ^{[1
]}

Schlesinger, TE ^{[1
]}

Toney, J ^{[1
]}

Sanguinetti, S ^{[1
]}

Montalti, M ^{[1
]}

Guzzi, M ^{[1
]}

机构：

[1] Hebrew Univ Jerusalem, IL-91904 Jerusalem, Israel

来源：

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷

关键词：

D O I：

10.1557/PROC-487-329

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Preparation of polycrystalline mercuric iodide very thin (1 mu m) films using laser ablation and thick films (100-600 mu m), using hot pressing, hot wall vapor deposition and screen printing methods, fabricated as radiation detector plates are briefly described. X-ray diffraction, photoluminescence and optical microscopic measurements as well as response to nuclear radiation will be given. Finally, recent results obtained with a large area imaging pixel detector will be shown.

引用

页码：329 / 337

页数：9

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