Electric Transport in Co-Rich Soft Magnetic Heterostructures

被引：0
|
作者：
Pinzon-Escobar, Enrique Francisco [1 ]
Montiel, Herlinda [1 ]
Esparza-Garcia, Alejandro [1 ]
Alvarez, Guillermo [2 ]
机构：
[1] Univ Nacl Autonoma Mexico, Inst Ciencias Aplicadas & Tecnol, Mexico City 04510, DF, Mexico
[2] Univ Autonoma Ciudad Mexico, Colegio Ciencia & Tecnol, Mexico City 06720, DF, Mexico
来源：
IEEE MAGNETICS LETTERS | 2021年 / 12卷
关键词：
Magnetic anisotropy; Strips; Perpendicular magnetic anisotropy; Amorphous magnetic materials; Silicon; Iron; Saturation magnetization; Magneto-electronics; amorphous alloys; magnetoresistance; magnetic heterostructure; thin films;
D O I：
10.1109/LMAG.2021.3120940
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, a comparative electrical andmagnetic study between Co67Fe4Mo1Si17B11/Au/Co67Fe4Mo1Si17B11 and Co67Fe4Mo1Si17B11/Au/Ni heterostructures is presented. The heterostructures were deposited by means of dc magnetron sputtering. These samples consisted of three layers: a Co67Fe4Mo1Si17B11 layer with thicknesses of 30, 62, and 125 nm; a central Au layer with thicknesses of 5 nm; and a ferromagnetic top layer with thicknesses of 30 nm. Photolithography was employed to etch line patterns from 0.1 to 1 mm width and 1 cm length. The strip pattern induces a shape anisotropy in heterostructure. The magnetoresistance behavior suggests a correlation between electrical and magnetic properties as width function of the strip pattern.
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页数：4
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