Negatively charged exciton X- in GaAs quantum dots

被引：16
|
作者：
Xie, WF [1 ]
Chen, CY [1 ]
机构：
[1] Guangzhou Normal Univ, Dept Phys, Guangzhou 510400, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 107卷 / 09期
关键词：
semiconductors;
D O I：
10.1016/S0038-1098(98)00261-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The Hamiltonian of a negatively charged exciton X- (trion) in a GaAs quantum dot with parabolic confinement has been diagonalized to obtain the low-lying eigenenergy values as a function of the dot size and the electron to hole effective mass ratio. We find that there are level reorderings as a, the mass ratio, varies continuously from 0.1 to 1.0. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：439 / 442
页数：4
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