Ideally ordered anodic porous alumina with Sub-50 nm hole intervals based on imprinting using metal molds

A process for the preparation of molds was developed to reduce the pattern of the molds and obtain hole intervals of anodic porous alumina. A metal mold was prepared by depositing a metal on a resist pattern prepared by EB lithography in the process. The process is simple and advantageous in improving the resolution of patterning in EB exposure by decreasing the forward scattering of an electron beam. The results show that the obtained hole array structure with fine patterns can be useful for the preparation of several types of functional nanodevice that require fine patterns as typified by magnetic recording media.