Detection of magnetic resonance on shallow donor shallow acceptor and deep (2.2 eV) recombination from GaN films grown on 6H-SiC

被引：0
|
作者：
Glaser, ER [1 ]
Kennedy, TA [1 ]
Brown, SW [1 ]
Freitas, JA [1 ]
Perry, WG [1 ]
Bremser, MD [1 ]
Weeks, TW [1 ]
Davis, RF [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：667 / 672
页数：6
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