Nonlinear terahertz metamaterials with active electrical control

被引:34
|
作者
Keiser, G. R. [1 ,2 ,6 ]
Karl, N. [1 ]
Liu, P. Q. [3 ,4 ,7 ]
Tulloss, C. [1 ]
Chen, H. -T. [5 ]
Taylor, A. J. [5 ]
Brener, I. [3 ]
Reno, J. L. [3 ]
Mittleman, D. M. [1 ]
机构
[1] Brown Univ, Sch Engn, Providence, RI 02912 USA
[2] Washington Coll, Dept Phys, Chestertown, MD 21620 USA
[3] Sandia Natl Labs, Ctr Integrated Nanotechnol, Albuquerque, NM 87185 USA
[4] Univ Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA
[5] Lao Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA
[6] Brown Univ, Providence, RI 02912 USA
[7] Sandia Natl Labs, Albuquerque, NM USA
基金
美国国家科学基金会;
关键词
MICROWAVE;
D O I
10.1063/1.4990671
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a study of an electrically modulated nonlinear metamaterial consisting of an array of split-ring resonators fabricated on n-type gallium arsenide. The resonant metamaterial nonlinearity appears as an intensity-dependent transmission minimum at terahertz frequencies and arises from the interaction between local electric fields in the split-ring resonator (SRR) capacitive gaps and charge carriers in the n-type substrate. We investigate the active tuning range of the metamaterial device as the incident terahertz field intensity is increased and conversely the effect of an applied DC bias on the terahertz field-induced nonlinear modulation of the metamaterial response. Applying a DC bias to the metamaterial sample alters the nonlinear response and reduces the net nonlinear modulation. Similarly, increasing the incident terahertz field intensity decreases the net modulation induced by an applied DC bias. We interpret these results in terms of DC and terahertz field- assisted carrier acceleration, scattering, and multiplication processes, highlighting the unique nature of this DC-field modulated terahertz nonlinearity. Published by AIP Publishing.
引用
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页数:5
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