Energetics of Island Formation of AlAs, GaAs, and InAs on Si(100)

被引：3
|
作者：
Lee, Geunjung [1 ]
Efimov, Oleg [1 ]
Yoon, Young-Gui [1 ]
机构：
[1] Chung Ang Univ, Dept Phys, Seoul 156756, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2012年 / 60卷 / 05期
基金：
新加坡国家研究基金会;
关键词：
AlAs; GaAs; InAs; Si(100); Energetics; QUANTUM DOTS; EPITAXIAL-GROWTH; ATOMIC-STRUCTURE; SI; SI(111); MONOLAYER; SUBSTRATE; SILICON;
D O I：
10.3938/jkps.60.777
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We study the energetics of island formation of AlAs, GaAs, and InAs on Si(100)2x1 substrates from first-principles. Si(100) 2x1: As is stable under As-rich conditions in all cases. Si(100)2x1:(AlAs) and Si(100) 2x1:(GaAs) are stable under Al-rich and Ga-rich conditions, respectively. However, the surface energy of Si(100) 2x1: InAs is higher than that of Si(100)2x1: As under In-rich conditions. The energies of thicker epitaxial overlayer films of AlAs, GaAs, and InAs are predicted to be higher than the corresponding energies of these monolayer films.
引用
收藏
页码：777 / 780
页数：4
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