High Sensitivity Polymer Visible-Near Infrared Photodetectors via an Inverted Device Structure and Manipulation of Injection Barrier Height

被引：61

作者：

Wu, Siping ^{[1
]}

Xiao, Biao ^{[1
]}

Zhao, Baofeng ^{[1
]}

He, Zhicai ^{[1
]}

Wu, Hongbin ^{[1
]}

Cao, Yong ^{[1
]}

机构：

[1] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China

来源：

SMALL | 2016年 / 12卷 / 25期

关键词：

CHARGE INJECTION; QUANTUM DOTS; PERFORMANCE;

D O I：

10.1002/smll.201600721

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Visible-near infrared photodetectors are reported with excellent overall device parameters from conjugated polymers with different optical bandgaps by optimal design in device structure and optimizing the thickness of the photoactive layer in nanoscale. The best visible-near infrared photodetectors show high detectivity (D*) of 1.7 x 10(13) Jones at a wavelength of 710 nm, which is among one of the best results of polymer photodetectors reported to date.

引用

页码：3374 / +

页数：8

共 12 条

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