EXAFS comparison of crystalline/continuous and amorphous/porous GaSb

被引：7
|
作者：
Kluth, SM
Johannessen, B
Kluth, P
Glover, CJ
Foran, GJ
Ridgway, MC
机构：
[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[2] Australian Nucl Sci & Technol Org, Menai, NSW 2234, Australia
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2005年 / 238卷 / 1-4期
关键词：
GaSb; ion implantation; amorphisation; porous semiconductors; EXAFS;
D O I：
10.1016/j.nimb.2005.06.060
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Ion irradiation of GaSb yields not only amorphization but also causes the material to become porous. For this report, GaSb has been irradiated to a dose sufficient to yield a porous network comprised of 15 nm wide rods. The local structure has been determined by EXAFS and compared with that of a polycrystalline standard. Significant Ga2O3 formation is observed along with Sb-Sb bonding far in excess of the homopolar bonding observed in other amorphous III-V semiconductors. (c) 2005 Published by Elsevier B.V.
引用
收藏
页码：264 / 267
页数：4
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