Sub-sampling of RF and THz waves using LT-GaAs photoconductors under 1550 nm light excitation

被引：6

作者：

Billet, M. ^{[1
]}

Desmet, Y. ^{[1
]}

Bavedila, F. ^{[1
]}

Barbieri, S. ^{[1
]}

Haensel, W. ^{[2
]}

Holzwarth, R. ^{[2
]}

Ducournau, G. ^{[1
]}

Lampin, J. -F. ^{[1
]}

Peytavit, E. ^{[1
]}

机构：

[1] Univ Lille, IEMN, F-59652 Villeneuve Dascq, France

[2] Menlo Syst GmbH, Martinsried, Germany

来源：

ELECTRONICS LETTERS | 2017年 / 53卷 / 24期

关键词：

gallium arsenide; III-V semiconductors; wide band gap semiconductors; photoconducting materials; microwave photonics; THz waves; RF waves; LT-gallium arsenide photoconductors; light excitation; low-temperature-grown gallium arsenide photoconductors; GaAs; wavelength; 1550; nm; pulsed laser; nearly-perfect photoswitch; duty-cycle-limited conversion; continuous wave sub-sampling; RF optoelectronics; THz optoelectronics; Fabry-Perot cavity photoconductors;

D O I：

10.1049/el.2017.2769

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-temperature-grown GaAs (LT-GaAs)-based Fabry-Perot cavity photoconductors, designed for RF and THz optoelectronics applications using1550 nm lasers, are studied. The sub-sampling of continuous waves at frequencies up to 300 GHz is presented. The duty-cycle-limited conversion losses measured up to 67 GHz show that this GaAs-based photoconductor behaves as a nearly perfect photoswitch controlled by a 1550 nm pulsed laser.

引用

页码：1596 / 1598

页数：2

共 7 条

[1] Sub-sampling of RF and THz waves using LT-GaAs Fabry-Perot Cavity photoconductors under 1550 nm light excitation
Billet, M.
Desmet, Y.
Bavedila, F.
Barbieri, S.
Haensel, W.
Holzwarth, R.
Ducournau, G.
Lampin, J-F.
Peytavit, E.
2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2018,
[2] Resonant cavities for efficient LT-GaAs photoconductors operating at λ = 1550 nm
Billet, M.
Latzel, P.
Pavanello, F.
Ducournau, G.
Lampin, J. -F.
Peytavit, E.
APL PHOTONICS, 2016, 1 (07)
[3] THz generation using 800 to 1550 nm excitation of photoconductors
Wood, C. D.
Hatem, O.
Cunningham, J. E.
Linfield, E. H.
Davies, A. G.
Cannard, P. J.
Moodie, D. G.
Pate, M.
Robertson, M. J.
2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2, 2009, : 641 - 643
[4] Simulation and Experiment of THz Wave Generation in LT-GaAs Excited by 1550 nm Laser
Liu, Xin
Meng, Qinghao
Ding, Jing
Su, Bo
He, Jingsuo
Zhang, Cunlin
2021 46TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ), 2021,
[5] Ultrafast LT-GaAs photoconductors based on a Fabry-Perot cavity designed for 1550 nm wavelength illumination
Billet, M.
Desmet, Y.
Bavedila, F.
Ducournau, G.
Barbieri, S.
Lampin, J. F.
Peytavit, E.
2017 42ND INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2017,
[6] Continuous-wave 1550 nm operated terahertz system using ErAs:In(AI) GaAs photoconductors with 52 dB dynamic range at 1 THz
Olvera, A. D. J. Fernandez
Lu, H.
Gossard, A. C.
Preu, S.
OPTICS EXPRESS, 2017, 25 (23): : 29492 - 29500
[7] Comparative study on THz time-domain spectroscopy using 780-nm 1.3-ps laser pulses with different detections of LT-GaAs photoconductive antenna and ZnTe electro-optic sampling
Tadokoro, Yuzuru
Takida, Yuma
Kumagai, Hiroshi
Nashima, Shigeki
Kobayashi, Ataru
NONLINEAR FREQUENCY GENERATION AND CONVERSION: MATERIALS, DEVICES, AND APPLICATIONS XII, 2013, 8604

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