Synthesis of NiMn2O4 thin films via a simple solid-state reaction route

被引：16
|
作者：
Ren, Wei [1 ]
Zhang, Yong-Chao [1 ]
Zhu, Nan-Nan [1 ]
Feng, Ai-Ling [2 ]
Shang, Shi-Guang [1 ]
机构：
[1] Xian Univ Posts & Telecommun, Sch Sci & Sch Elect Engn, Xian 710121, Peoples R China
[2] Baoji Univ Arts & Sci, Inst Phys & Optoelect Technol, Baoji 721016, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2020年 / 46卷 / 08期
关键词：
Thermistor; Mn-based spinel oxide; Thin film; Electron beam evaporation; Electrical property; OPTICAL-PROPERTIES; CATIONIC DISTRIBUTION; ELECTRICAL-PROPERTIES; SPINEL;
D O I：
10.1016/j.ceramint.2020.01.198
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Herein, NiMn2O4 (MNO) spinel oxide thermistor films were synthesized on a SiO2/Si substrate via annealing the electron beam evaporated Mn-Ni-Mn metal trilayers in air at different temperatures. The X-ray diffraction (XRD) results indicate that polycrystalline spinel-structured MNO thermistor films were formed. The surface particle size of the series MNO films quickly reduced from similar to 300 to similar to 120 nm with a temperature increase from 650 to 750 degrees C, and then, slowly reduced to 80 nm or even smaller with a temperature increase from 750 to 950 degrees C. Specifically, 750 degrees C anneal formed the spinel MNO film with largest B value of 5067 and Ea value of 0.4366. The proposed synthesis route for MNO spinel oxide film has been proven to be feasible.
引用
收藏
页码：11675 / 11679
页数：5
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