Preparation and characterization of silicon carbide thin films synthesized by rf-reactive sputtering

被引：0
|
作者：
Peng, XF [1 ]
Zhang, YZ [1 ]
Song, LX [1 ]
Hu, XF [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
来源：
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 2000年 / 4086卷
关键词：
SiC thin films; reactive sputtering; compositions; structure; microhardness;
D O I：
10.1117/12.408436
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Carbon-rich SiC thin films were synthesized by rf-reactive sputtering at different anodic voltages, 1.2 kV, 1.6 kV and 2.0 kV respectively. XPS, FTIR, Raman spectra and Nano Indentor microhardness were used to characterize as-deposited thin films. The results showed that higher anodic voltage enabled to increase Si-C bond and sp(3)-bonded carbon atoms in the films. The sample grown at 2.0 kV exhibited Si/C ratio of nearly 1 from XPS results, a pronounced Si-C peak in the FTIR spectra, only a weak peak at 1420 cm(-1) and no other graphite peak in the Raman spectra, the microhardness of 25.2 GPa.
引用
收藏
页码：221 / 224
页数：4
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