Charac e izatio of an Asymmetrical Capacitive MEMS Tilt Sensor

被引：0

作者：

Gao, Y. ^{[1
]}

Zhang, X. ^{[1
,2
]}

Qi, Y. ^{[1
]}

Zhang, H. ^{[1
]}

Ryutaro, M. ^{[1
]}

Jiang, Z. ^{[1
]}

Wei, X. ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, State Key Lab Mfg Syst Engn, Xian 710049, Peoples R China

[2] Northwest Inst Nucl Technol, Xian 710024, Peoples R China

来源：

2021 IEEE 16TH INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS) | 2021年

基金：

中国国家自然科学基金;

关键词：

MEMS; tilt sensing; asymmetrical capacitors; bias instability; temperature effect;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a uniaxial tilt sensor with the asymmetric differential capacitors for the unique tilt measurement, which has the advantages of low cross sensitivity and low fabrication cost. The MEMS capacitive tilt sensor was designed, characterized and verified for high accuracy and reliability. The experiment results indicated the average sensitivity and bias instability of 5 ff/ and 0.0028 (at 0 position). The temperature drift of bias is 0.034 / C (above room temperature) and 0.146 / C (below room temperature). After calibration compensation, the temperature sensitivity drift can be stabilized to be only 15.8 ppm/ C. In addition, the practical performance has been validated by the prototype of the test board, which indicates the feasible application potential of the asymmetrical capacitive MEMS tilt sensor.

引用

页码：1660 / 1663

页数：4

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