Phase states and magnetic structure of superconducting lead inclusions in a narrow-gap PbTe semiconducting host

被引：7

作者：

Darchuk, SD ^{[1
]}

Korovina, LA

Sizov, FF

Dietl, T

Kolesnik, S

Sawicki, M

机构：

[1] Ukrainian Acad Sci, Inst Semicond Phys, UA-252028 Kiev, Ukraine

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 07期

关键词：

Magnetic Field; Phase Transition; Phase State; Magnetic Material; Electromagnetism;

D O I：

10.1134/1.1187487

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Samples of the narrow-gap semiconductor PbTe with n- and p-type conductivities are investigated using a SQUID magnetometer in the temperature range 1.7-20 K and in magnetic fields up to 1 kOe. It is shown that there are microscopic inclusions of superconducting lead with minimum dimensions similar to 1300 Angstrom containing similar to (1 - 5) x 10(18) lead atoms/cm(3) in the lead telluride matrix and that the samples undergo a phase transition that is characteristic of type-II superconductors. (C) 1998 American Institute of Physics.

引用

页码：700 / 703

页数：4

共 20 条

[1] Phase states and magnetic structure of superconducting lead inclusions in a narrow-gap PbTe semiconducting host
S. D. Darchuk
L. A. Korovina
F. F. Sizov
T. Dietl
S. Kolesnik
M. Sawicki
Semiconductors, 1998, 32 : 700 - 703
[2] Phase states and magnetic structure of superconducting inclusions in narrow-gap semiconductor matrices
Darchuk, SD
FOURTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 1999, 3890 : 144 - 148
[3] Narrow-gap semiconducting silicides: the band structure
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Migas, DB
Shaposhnikov, VL
Borisenko, VE
Heinrich, A
MICROELECTRONIC ENGINEERING, 2000, 50 (1-4) : 249 - 255
[4] Charge impurity states of In, Ga, Ge in the narrow-gap PbTe
Zlomanov, VP
Tkalich, AK
FOURTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 1999, 3890 : 158 - 162
[5] Problem of impurity states in narrow-gap lead telluride-based semiconductors
Ryabova, LI
Khokhlov, DR
JETP LETTERS, 2004, 80 (02) : 133 - 139
[6] Problem of impurity states in narrow-gap lead telluride-based semiconductors
L. I. Ryabova
D. R. Khokhlov
Journal of Experimental and Theoretical Physics Letters, 2004, 80 : 133 - 139
[7] Interface states in a narrow-gap semiconductor structure without band inversion
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Silin, AP
Vereshchagin, SA
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 2000, 3-4 : 79 - 84
[8] A SIMPLIFIED PARABOLIC STRUCTURE FOR NARROW-GAP SEMICONDUCTORS IN THE PRESENCE OF QUANTIZING MAGNETIC-FIELDS
ABIDI, STH
MOHAMMAD, SN
SOLID-STATE ELECTRONICS, 1984, 27 (12) : 1153 - 1155
[9] BAND-STRUCTURE AND QUANTUM TRANSPORT PHENOMENA IN NARROW-GAP DILUTED MAGNETIC SEMICONDUCTORS
KOSSUT, J
SEMICONDUCTORS AND SEMIMETALS, 1988, 25 : 183 - 227
[10] IMPACT IONIZATION AND CHAOTIC STATES IN NARROW-GAP SEMICONDUCTORS UNDER A STRONG MAGNETIC-FIELD
ABE, Y
SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 795 - 798

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