Ion beam doping of semiconductor nanowires

被引：0

作者：

Borschel, C. ^{[1
]}

Niepelt, R. ^{[1
]}

Geburt, S. ^{[1
]}

Ronning, C. ^{[1
]}

机构：

[1] Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany

来源：

INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 | 2010年

关键词：

SILICON NANOWIRES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconductor nanowires are of major importance within the area of nanotechnology, and are usually synthesized using the so-called vapor-liquid-solid mechanism. Controlled doping, a necessary issue in order to realize devices, is an unsolved problem and an extremely difficult task if using such a growth mechanism. We use an alternative route for modifying the electrical, optical and magnetic properties of semiconductor nanowires: ion implantation. Several independent studies on ion beam doping of semiconductor nanowires will be presented.

引用

页码：40 / 41

页数：2

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