High-Bandwidth Shielded Rogowski Coil Current Sensor for SiC MOSFET Power Module

被引:6
|
作者
Zhang, Wen [1 ]
Wang, Fred [2 ]
Holzinger, Bernhard [3 ]
机构
[1] Univ Tennessee, Min H Kao Dept EECS, Knoxville, TN 37916 USA
[2] Univ Tennessee, Min H Kao Dept EECS, Oak Ridge Natl Lab, Knoxville, TN USA
[3] Keysight Technol, Boblingen, Germany
基金
美国国家科学基金会;
关键词
Current sensor; Rogowski coil; SiC MOSFET; double pulse test;
D O I
10.1109/APEC42165.2021.9487370
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Existing current sensors suffer from insufficient measurement bandwidth or large insertion area to continuously monitor the switching transient current of wide-bandgap devices. A combinational Rogowski coil concept is proposed here, where the self-integrating region of a shielded Rogowski coil is combined with its differentiating region. The overall measurement bandwidth is effectively extended by the self-integrating region. The design methodology for the shielded Rogowski coil, especially the parasitic elements and error analysis, is discussed. Finally, a prototype is demonstrated with a sensitivity is 5.0 m Omega and a bandwidth of 200 MHz. The measurement in a SiC power module double pulse shows it can faithfully capture the transient current while introducing little interference.
引用
收藏
页码:1242 / 1249
页数:8
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