Metal-to-semiconductor emission of hot electrons excited on catalytic reaction

被引:2
|
作者
Kharlamov, V. F. [1 ]
Kostin, A. V. [1 ]
Kubyshkina, M. V. [1 ]
Kharlamov, F. V. [1 ]
机构
[1] Orel State Tech Univ, Oryol 302020, Russia
关键词
D O I
10.1134/S1063782608010089
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The properties necessary for the chemoemission of hot electrons through the interface between a metal film and a semiconductor are established for a metal-semiconductor structure in which hot electrons are excited during a catalytic reaction at the interface between the metal film and the gas mixture. The possibility of generating electric energy using a method based on this effect is substantiated.
引用
收藏
页码:59 / 66
页数:8
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