Investigation on the Early Stages of Growth of Secondary Grains in a Grain Oriented Silicon Steel

被引:4
|
作者
Citrawati, F. [1 ]
Quadir, M. Z. [1 ,2 ]
Munroe, P. R. [1 ]
机构
[1] Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[2] Curtin Univ, John de Laeter Ctr, Microscopy & Microanal Facil, Perth, WA 6845, Australia
关键词
silicon steel; secondary recrystallization; secondary grains; abnormal grain growth; Goss; grain oriented; selective growth; GOSS TEXTURE; BOUNDARY; RECRYSTALLIZATION; ORIGIN;
D O I
10.1016/j.proeng.2017.04.153
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A sequence of cyclic annealing experiments was performed to trace the growth of secondary grains after primary recrystallization in a two-pass cold rolled Fe-3.5%Si steel. By using electron backscattered diffraction (EBSD), the development of grain growth and texture in the early stages of secondary growth in as-received and annealed samples was examined. Annealing was performed at 900 degrees C for 3, 6 and 15 min. During the early stages of secondary growth, it was observed that Goss grains and other oriented grains can grow at the expense of their surrounding matrix grains. This growth is likely to be determined by particle dissolution at their boundaries which, hence, affects their ability to break away from pinning. It is shown that the presence of Sigma 5 and Sigma 9 CSL boundaries that surround Goss grains, size advantage in the as-received sample, texture sharpness and the presence of Goss grain colonies do not guarantee Goss grains to successfully grow at this stage of annealing. (C) 2017 The Authors. Published by Elsevier Ltd.
引用
收藏
页码:750 / 755
页数:6
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