Ab Initio Electronic Band Structure Calculation of Two-Dimensional Nanoparticles of Gallium Selenide

被引:10
|
作者
Rybkovskiy, D. V. [1 ]
Vorobyev, I. V. [1 ]
Osadchy, A. V. [1 ]
Obraztsova, E. D. [1 ]
机构
[1] Russian Acad Sci, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
关键词
GaSe; DFT; Electronic Structure; Nanoparticles; GASE;
D O I
10.1166/jno.2012.1218
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper we present the results of the first-principles electronic structure computations of the two-dimensional GaSe tetralayers and the bulk material. The calculations were performed within the density functional theory with a plane wave basis set. The comparison of the obtained band structures shows an expected splitting of the energy bands in a multi-layer GaSe, which causes the change of the bandgap width. Thus, a narrowing of the bandgap for the bigger number of tetralayers has been demonstrated. These results can provide an important information for understanding the optical properties of GaSe quantum dots which are known to be synthesized in form of thin disks.
引用
收藏
页码:65 / 67
页数:3
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