Mid-infrared Supercontinuum Generation in a Low-dispersion Ge-on-Si Waveguide Using Sub-picosecond Pulses

被引：0
|
作者：
Yang, Minghui [1 ]
Guo, Yuhao [1 ]
Wang, Jing [1 ]
Han, Zhaohong [2 ]
Wada, Kazumi [3 ]
Kimerling, Lionel C. [2 ]
Agarwal, Anuradha M. [2 ]
Michel, Jurgen [2 ]
Li, Guifang [1 ,4 ,5 ]
Zhang, Lin [1 ,2 ]
机构：
[1] Tianjin Univ, Sch Precis Instrument & Optoelect Engn, Minist Educ, Photon Syst Lab,Key Lab Optoelect Informat Techno, Tianjin 300072, Peoples R China
[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[3] Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan
[4] Univ Cent Florida, CREOL, Coll Opt & Photon, 4000 Cent Florida Blvd, Orlando, FL 32816 USA
[5] Univ Cent Florida, FPCE, 4000 Cent Florida Blvd, Orlando, FL 32816 USA
来源：
2016 IEEE 13TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) | 2016年
关键词：
SILICON;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
we present a dispersion-engineered Ge-on-Si waveguide with flat and low dispersion from 3 to 11 mu m, which enables coherent supercontinuum generation from 3700 to 9240 nm using a sub-picosecond pulsed pump.
引用
收藏
页码：36 / 37
页数：2
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