Synthesis and characterization of the ternary compounds Cu2GeSe3 and Cu2GeTe3

被引:0
|
作者
Villarreal, MA
Fernández, BJ
Pirela, M
Velásquez-Velásquez, A
Mora, AJ
Delgado, GE
机构
[1] Univ Andes, Fac Ciencias, Dept Fis, Ctr Estudio Semicond,Lab Temp Bajas, La Hechicera Merida 5251, Venezuela
[2] Univ Los Andes, Fac Ciencias, Dept Quim, Lab Cristallog, Merida 5251, Venezuela
关键词
semiconductors; thermal analysis; X-ray powder diffraction;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This work reports the synthesis and characterization of the ternary compounds Cu2GeSe3 and Cu2GeTe3. Both samples were synthesized by using the direct fusion technique. The chemical analysis (EDX) confirmed the 2:13 stoichiometric ratio for both compounds. The thermal differential analysis (ATD) showed the existence of a single phase for Cu2GeSe3 that melts at 765 degreesC, and a principal phase for Cu2GeTe3 that melts at 504 degreesC. In the last compound, a second transition at 357 degreesC is also observed but with a peak area of less than 5% of total area, approximately. The X-ray powder diffraction analysis indicated that both compounds crystallize in the orthorhombic space group Imm2, with unit cell parameters: a = 11.8616(3) Angstrom, b = 3,9525(1) Angstrom, c = 5.4879(1) Angstrom, V = 257.29(1) Angstrom(3) for Cu2GeSe3, and a = 12.6406(6) Angstrom, b = 4.2115(2) Angstrom, c = 5.9261(2) Angstrom, V= 315.48(2) Angstrom(3) for Cu2GeTe3.
引用
收藏
页码:198 / 200
页数:3
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