Influence of delta⟨Mn⟩ doping parameters of the GaAs barrier on circularly polarized luminescence of GaAs/InGaAs heterostructures

被引：8
|
作者：
Dorokhin, M. V. [1 ]
Zaitsev, S. V. [2 ]
Brichkin, A. S. [2 ]
Vikhrova, O. V. [1 ]
Danilov, Yu. A. [1 ]
Zvonkov, B. N. [1 ]
Kulakovskii, V. D. [2 ]
Prokof'eva, M. M. [1 ]
Sholina, A. E. [1 ]
机构：
[1] Univ Nizhni Novgorod, Tech Phys Res Inst, Nizhnii Novgorod 603950, Russia
[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Oblast, Russia
来源：
PHYSICS OF THE SOLID STATE | 2010年 / 52卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
LAYERS; SEMICONDUCTORS; FERROMAGNETISM;
D O I：
10.1134/S1063783410110144
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The circular polarization of low-temperature electroluminescence of diodes based on heterostructures with an undoped quantum well InGaAs/GaAs and a deltaaOE (c) Mn > layer in the GaAs barrier has been investigated. The possibility of changing the degree of circular polarization of the electroluminescence by varying the main structural parameters of diodes (spacer layer thickness, i.e., the distance between the deltaaOE (c) Mn > layer and the quantum well, atomic concentration in the deltaaOE (c) Mn > layer, and introduction of an additional acceptor delta layer) has been analyzed. It has been revealed that the variation in the spacer layer thickness is the most effective method for controlling the degree of circular polarization of the electroluminescence.
引用
收藏
页码：2291 / 2296
页数：6
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