Inelastic effects in low-energy electron reflectivity of two-dimensional materials

被引:7
|
作者
Gao, Qin [1 ]
Mende, Patrick C. [1 ]
Widom, Michael [1 ]
Feenstra, Randall M. [1 ]
机构
[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
来源
基金
美国国家科学基金会;
关键词
AG FILMS; MICROSCOPY; GRAPHITE; W(110); METALS; LEED;
D O I
10.1116/1.4903361
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A simple method is proposed for inclusion of inelastic effects (electron absorption) in computations of low-energy electron reflectivity (LEER) spectra. The theoretical spectra are formulated by matching of electron wavefunctions obtained from first-principles computations in a repeated vacuum-slab-vacuum geometry. Inelastic effects are included by allowing these states to decay in time in accordance with an imaginary term in the potential of the slab, and by mixing of the slab states in accordance with the same type of distribution as occurs in a free-electron model. LEER spectra are computed for various two-dimensional materials, including free-standing multilayer graphene, graphene on copper substrates, and hexagonal boron nitride on cobalt substrates. (C) 2014 American Vacuum Society.
引用
收藏
页数:11
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