Raman E0 resonance of Ge quantum dots in Si/Ge/Si structures

被引：0
|
作者：
Talochkin, AB [1 ]
Efanov, AV
Markov, VA
Nikiforov, AI
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
来源：
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA | 1999年 / 63卷 / 02期
关键词：
D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：290 / 298
页数：9
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