Investigation on the effect of indium composition on ultrafast carrier dynamics in InGaN alloys

被引：9
|
作者：
Zhang, Yi [1 ]
Tang, Liangliang [1 ]
Lin, Keman [1 ]
Wang, Pei [1 ]
Xu, Chang [1 ]
机构：
[1] Hohai Univ, Coll Energy & Elect Engn, Nanjing, Jiangsu, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / 01期
基金：
中国国家自然科学基金;
关键词：
RELAXATION-TIME; HOT CARRIERS; SOLAR-CELLS; LOCALIZATION; GROWTH; PHASE; LUMINESCENCE; SCATTERING; FILMS; GAAS;
D O I：
10.7567/1347-4065/aaecd7
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, we investigated the effect of indium composition on carrier relaxation mechanisms in InGaN alloys. Four high quality alloys with indium composition from 25% to 75% were fabricated using energetic neutral atomic-beam lithography/epitaxy molecular beam epitaxy. Using sub-picosecond resolved photoluminescence at high carrier density, it was found the effective carrier lifetime extends with increasing indium composition. Moreover, the calculated initial carrier temperature also rises with higher indium composition. These results are consistent with the theoretical prediction that a greater phonon bandgap could reduce the carrier cooling rate to a certain extent via hot carrier bottleneck effect. (C) 2018 The Japan Society of Applied Physics
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页数：5
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