Evolution of cross-sectional structures during selective MBE growth of InGaAs hexagonal nanowire networks on InP (001) and (111)B substrates

被引：0

作者：

Fukushi, T ^{[1
]}

Muranaka, T ^{[1
]}

Kimura, T ^{[1
]}

Hasegawa, H ^{[1
]}

机构：

[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

来源：

2004 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper investigates temporal evolution of cross-sectional structures during the selective MBE growth of hexagonal InGaAs QWR networks. Patterns combining <-110 >- and < 510 >- directions on the (001) substrate and those combining <-1-12 >-directions on the (111)B substrate were compared. Pattern formation process and H*-assisted ridge growth were optimized, showing feasibility of hexagonal node densities above 1 x 10(9) cm(-2) with better surface uniformity on (111)B substrates. Cross-sectional structure, wire shape, wire size and their temporal evolution strongly depended on substrate orientation and growth conditions, reflecting complicated kinetic process of growth. Data for precise wire width control have been obtained for both substrate orientations.

引用

页码：450 / 453

页数：4

共 11 条

[1] Growth of hexagonal ZnCdS on GaAs(111)B and (001) substrates by MBE
Umeya, H
Kitamura, K
Jia, A
Shimotomai, M
Kato, Y
Kobayashi, M
Yoshikawa, A
Takahashi, K
JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 192 - 196
[2] Selective MBE growth of hexagonal networks of trapezoidal and triangular GaAs nanowires on patterned (111)B substrates
Tamai, Isao
Hasegawa, Hideki
JOURNAL OF CRYSTAL GROWTH, 2007, 301 (SPEC. ISS.) : 857 - 861
[3] Selective molecular beam epitaxy growth of GaAs hexagonal nanowire networks on (111)B patterned substrates
Yoshida, S
Tamai, I
Sato, T
Hasegawa, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B): : 2064 - 2068
[4] Cross-sectional evolution and its mechanism during selective molecular beam epitaxy growth of GaAs quantum wires on (111)B substrates
Tamai, Isao
Sato, Taketomo
Hasegawa, Hideki
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2005, 44 (4 B): : 2652 - 2656
[5] Cross-sectional evolution and its mechanism during selective molecular beam epitaxy growth of GaAs quantum wires on (111)B substrates
Tamai, I
Sato, T
Hasegawa, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2652 - 2656
[6] Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates
Fujikura, H
Muranaka, T
Hasegawa, H
PHYSICA E, 2000, 7 (3-4): : 864 - 869
[7] Study of selective MBE growth on patterned (001) InP substrates toward realization of [100]-oriented InGaAs ridge quantum wires
Ono, N
Fujikura, H
Hasegawa, H
COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 385 - 390
[8] Selective MBE growth of GaAs/AlGaAs nanowires on patterned GaAs (001) substrates and its application to hexagonal nanowire network formation
Sato, T
Tamai, I
Jiang, C
Hasegawa, H
COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 325 - 330
[9] Vertical barrier layer formation during selective MBE growth of InGaAs ridge quantum wires on InP patterned substrates
Jiang, C
Fujikura, H
Hasegawa, H
PHYSICA E, 2000, 7 (3-4): : 902 - 906
[10] Formation of high-density GaAs hexagonal nano-wire networks by selective MBE growth on pre-patterned (001) substrates
Tamai, I
Sato, T
Hasegawa, H
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 521 - 526

← 1 2 →