Multi-Bias Nonlinear Characterization of GaN FET Trapping Effects Through a Multiple Pulse Time Domain Network Analyzer

A recently proposed setup for the pulsed characterization of electron devices is adopted for a more detailed and accurate evaluation of charge trapping effects in UMS 0.25 inn GaN FETs. Experimental results obtained by this instrumentation, which acts as a Multiple Pulse Time Domain Network Analyzer, show that two different kinds of charge trapping phenomena, involving both linear and nonlinear dynamics, play a relevant role in determining the device behavior. Dynamically linear and nonlinear trap effects are characterized and quantified by defining two different lag functions, which may lead to future improvements of multibias empirical nonlinear models and technology evaluation criteria.