Catalyst-free growth of single crystalline β-Ga2O3 microbelts on patterned sapphire substrates

被引：8

作者：

Feng, Qiuju ^{[1
]}

Li, Tongtong ^{[1
]}

Li, Fang ^{[1
]}

Li, Yunzheng ^{[1
]}

Shi, Bo ^{[1
]}

Gao, Chong ^{[1
]}

Wang, Deyu ^{[1
]}

Liang, Hongwei ^{[2
]}

机构：

[1] Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China

[2] Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2019年 / 509卷

关键词：

Low dimensional structures; Characterization; Chemical vapor deposition processes; Semiconducting gallium compounds; GALLIUM OXIDE; NANOWIRES; GA2O3;

D O I：

10.1016/j.jcrysgro.2019.01.006

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The high density and large quantity beta-Ga2O3 microbelts were synthesized by changing the growth temperature on patterned sapphire substrates (PSS) by chemical vapor deposition equipment. The width of the microbelts was about 1-1.5 mu m and the length was about 15 The results of different growth temperature influenced for surface morphology and crystal structure of beta-Ga2O3 indicated that the optimal growth temperature of beta-Ga2O3 microbelts was at 900 degrees C. Furthermore, the growth mechanism of microbelts was also studied. It was found that the hemispherical PSS played an important role for beta-Ga2O3 microbelts formation. The optical absorption spectrum indicated that optical band gap energy of microbelts was about 4.78 eV.

引用

页码：91 / 95

页数：5

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