Reactive ion etching (RIE) system design and its characterisation

被引：4

作者：

Paul, AK ^{[1
]}

Sodhi, K ^{[1
]}

Dimri, AK ^{[1
]}

Banerjie, PC ^{[1
]}

Bajpai, RP ^{[1
]}

机构：

[1] Cent Sci Instruments Org, Microelect Instrumentat Grp, Chandigarh 160020, India

来源：

IETE TECHNICAL REVIEW | 1998年 / 15卷 / 1-2期

关键词：

D O I：

10.1080/02564602.1998.11416728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design parameters have been presented for a reactive ion etching system and the effects of the process parameters like gas pressure, gas flow, RF power on the etch rates of silicon were studied using SF6 gas. The role of the self de-bias and hence ion bombardment energy which is a key factor in determining the etch characteristics in a RIE process have also been discussed.

引用

页码：49 / 54

页数：6

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