Contact Inspection of Si Nanowire with SEM Voltage Contrast

被引：2

作者：

Ohashi, Takeyoshi ^{[1
]}

Yamaguchi, Atsuko ^{[1
]}

Hasumi, Kazuhisa ^{[2
]}

Ikota, Masami ^{[2
]}

Lorusso, Gian ^{[3
]}

Horiguchi, Naoto ^{[3
]}

机构：

[1] Hitachi Ltd, Tokyo 1858601, Japan

[2] Hitachi High Technol Corp, Hitachinaka, Ibaraki 3128504, Japan

[3] IMEC, B-3001 Leuven, Belgium

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXXII | 2018年 / 10585卷

关键词：

CD-SEM; nanowire; voltage contrast; contact inspection; resistance measurement; capacitance measurement; charging dynamics;

D O I：

10.1117/12.2296992

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A methodology to evaluate the electrical contact between nanowire (NW) and source/drain (SD) in NW FETs was investigated with SEM voltage contrast (VC). The electrical defects were robustly detected by VC. The validity of the inspection result was verified by TEM physical observations. Moreover, estimation of the parasitic resistance and capacitance was achieved from the quantitative analysis of VC images which were acquired with different scan conditions of electron beam (EB). A model considering the dynamics of EB-induce charging was proposed to calculate the VC. The resistance and capacitance can be determined by comparing the model-based VC with experimentally obtained VC. Quantitative estimation of resistance and capacitance would be valuable not only for more accurate inspection, but also for identification of the defect point.

引用

页数：11

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