Design of inverse Class-F power amplifier based on dual transmission line with 87.4% drain efficiency

被引：2

作者：

Huang, Hang ^{[1
]}

Zhang, Bo ^{[1
]}

Yu, Cuiping ^{[1
]}

Gao, Jinchun ^{[1
]}

Wu, Yongle ^{[1
]}

Liu, Yuanan ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, Beijing Key Lab Work Safety Intelligent Monitorin, Sch Elect Engn, Beijing 100876, Peoples R China

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2017年 / 59卷 / 12期

基金：

国家高技术研究发展计划(863计划);

关键词：

dual transmission line (DTL); GaN; high efficiency; inverse Class-F; power amplifier (PA);

D O I：

10.1002/mop.30859

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an inverse Class-F power amplifier (PA) based on dual transmission line (DTL) is presented. The output matching network (OMN) with DTL has a simple and compact circuit topology compared with other harmonic-tuned OMNs with open/short shunt stubs and provides up to 6th harmonic suppression. In addition, the DTL structure is equivalent to a quarter wavelength transformer for fundamental matching. A GaN HEMT is adopted to achieve high output power and high drain efficiency in the proposed inverse Class-F PA. Finally, a 2.4GHz inverse Class-F PA is designed and fabricated. The experimental results show the highest drain efficiency of 87.4% in the operating frequency with the corresponding output power of 44.5dBm, and adjacent channel power ratio (ACPR) of -50.8/-51.6dBc with digital predistortion technique (DPD) at 2.4GHz.

引用

页码：3010 / 3014

页数：5

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