Determination of free carrier recombination lifetime in amorphous semiconductors: application to the study of iodine doping effect in arsenic triselenide

被引：10

作者：

Nagase, T ^{[1
]}

Naito, H ^{[1
]}

机构：

[1] Univ Osaka Prefecture, Dept Phys & Elect, Osaka 5998531, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

recombination lifetime; iodine doping; arsenic triselenide;

D O I：

10.1016/S0022-3093(98)00163-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A method for measuring the monomolecular recombination lifetime in amorphous semiconductors is described. The present method is based on the measurement of localized-state distributions from transient photoconductivity data and on the fitting of computer-generated photocurrent transients using the measured localized-state distributions to experimental data, by which the monomolecular recombination lifetime is determined. The present method is applied to the study of the iodine doping effects in amorphous arsenic triselenide, and it is found that the iodine doping does not change the localized-state distribution or monomolecular recombination lifetime. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：824 / 828

页数：5

共 19 条

[1] Determination of free carrier recombination lifetime in amorphous semiconductors: Application to the study of iodine doping effect in arsenic triselenide
Nagase, Takashi
Naito, Hiroyoshi
Journal of Non-Crystalline Solids, 227-230 (Pt 2): : 824 - 828
[2] Simple interpretation of enhancement of hole drift mobility in amorphous arsenic triselenide induced by iodine doping
Univ of Osaka Prefecture, Osaka, Japan
Solid State Commun, 9 (697-700):
[3] A SIMPLE INTERPRETATION OF ENHANCEMENT OF HOLE DRIFT MOBILITY IN AMORPHOUS ARSENIC TRISELENIDE INDUCED BY IODINE DOPING
NAITO, H
IWAI, T
AMII, H
OKUDA, M
MATSUSHITA, T
SOLID STATE COMMUNICATIONS, 1995, 96 (09) : 697 - 700
[4] A CONTACTLESS METHOD FOR DETERMINATION OF CARRIER LIFETIME, SURFACE RECOMBINATION VELOCITY, AND DIFFUSION CONSTANT IN SEMICONDUCTORS
WALDMEYER, J
JOURNAL OF APPLIED PHYSICS, 1988, 63 (06) : 1977 - 1983
[5] Determination of carrier bulk lifetime and surface recombination velocity in semiconductor from double-wavelength free carrier absorption
Wang Qian
Liu Wei-Guo
Gong Lei
Wang Li-Guo
Li Ya-Qing
ACTA PHYSICA SINICA, 2018, 67 (21)
[6] DETERMINATION OF CARRIER LIFETIME, DIFFUSION LENGTH, AND SURFACE RECOMBINATION VELOCITY IN SEMICONDUCTORS FROM PHOTO-EXCITED INFRARED ABSORPTION
NILSSON, NG
SOLID-STATE ELECTRONICS, 1964, 7 (06) : 455 - 463
[7] INFLUENCE OF THE TEMPERATURE-DEPENDENCE OF RECOMBINATION LIFETIME OF FREE-CARRIERS IN AMORPHOUS-SEMICONDUCTORS ON THERMOSTIMULATED PHOTOCURRENT SPECTRA
XU, ZY
GU, BY
DONG, BZ
ZHU, MF
COMMUNICATIONS IN THEORETICAL PHYSICS, 1988, 10 (03) : 281 - 289
[8] CARRIER LIFETIME MEASUREMENT FOR DETERMINATION OF RECOMBINATION RATES AND DOPING LEVELS OF III-V SEMICONDUCTOR LIGHT-SOURCES
SU, CB
OLSHANSKY, R
APPLIED PHYSICS LETTERS, 1982, 41 (09) : 833 - 835
[9] Determination of substrate doping, substrate carrier lifetime and density of surface recombination centres of MOSFETs by gate-controlled-diode measurements
Chen, TP
Chan, DSH
Chim, WK
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (05) : 672 - 678
[10] DETERMINATION OF CARRIER DENSITY DEPENDENT LIFETIME AND QUANTUM EFFICIENCY IN SEMICONDUCTORS WITH A PHOTOLUMINESCENCE METHOD (APPLICATION TO INGAASP INP HETEROSTRUCTURES)
PIETZSCH, J
KAMIYA, T
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 42 (02): : 91 - 102

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