Investigation of the SiO2/Si(111) interface by means of angle-scanned photoelectron diffraction

Photoelectron diffraction measurements of the Si 2p core level were carried out in order to investigate the interface structure of a SiO2 film thermally grown on Si(lll). The photoemission spectra show chemically shifted components derived from the individual oxidation states, which exhibit different diffraction patterns. These diffraction patterns are compared with those obtained by multiple scattering calculations for a simple chemical abrupt interface structure model. In this model each oxidation state occurs in various bonding configurations. Thus the experimental data are compared with superpositions of simulated patterns for possible model clusters. As a result of a multipole R-factor analysis we obtain a parameter set that reproduces the experimental data well. (C) 2001 Elsevier Science BN. All rights reserved.