Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis

被引：9

作者：

Oliveira, F. ^{[1
,2
]}

Fischer, I. A. ^{[1
]}

Benedetti, A. ^{[3
]}

Cerqueira, M. F. ^{[2
]}

Vasilevskiy, M. I. ^{[2
]}

Stefanov, S. ^{[4
]}

Chiussi, S. ^{[4
]}

Schulze, J. ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Semicond Engn, D-70569 Stuttgart, Germany

[2] Univ Minho, Ctr Phys, P-4710057 Braga, Portugal

[3] Univ Vigo, CACTI, Vigo 36310, Spain

[4] Univ Vigo, Dept Fis Aplicada, Vigo 36310, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 12期

关键词：

STRANSKI-KRASTANOV GROWTH; RAMAN-SCATTERING; QUANTUM DOTS; ALLOYS; SI(001); GE(001)2X1; ISLANDS; SEMICONDUCTORS; RELAXATION; PATHWAY;

D O I：

10.1063/1.4915939

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350 degrees C. Samples consist of layers (from 1 up to 10) of Ge0.96Sn0.04 self-assembled dots separated by Si spacer layers, 10 nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy, and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications. (C) 2015 AIP Publishing LLC.

引用

页数：7

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