Spatially resolved inhomogeneous ferromagnetism in (Ga,Mn)As diluted magnetic semiconductors: A microscopic study by muon spin relaxation

被引:31
|
作者
Storchak, Vyacheslav G. [1 ]
Eshchenko, Dmitry G. [2 ,3 ]
Morenzoni, Elvezio [3 ]
Prokscha, Thomas [3 ]
Suter, Andreas [3 ]
Liu, Xinyu [4 ]
Furdyna, Jacek K. [4 ]
机构
[1] Russian Res Ctr, Kurchatov Inst, Moscow 123182, Russia
[2] Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland
[3] Paul Scherrer Inst, Lab Muon Spin Spect, CH-5232 Villigen, Switzerland
[4] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
关键词
D O I
10.1103/PhysRevLett.101.027202
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Thin epitaxial films of the diluted magnetic semiconductor (DMS) GaMnAs have been studied by low energy muon spin rotation and relaxation (LE-mu SR) as well as by transport and magnetization measurement techniques. LE-mu SR allows measurements of the distribution of magnetic field on the nanometer scale inaccessible to traditional macroscopic techniques. The spatial inhomogeneity of the magnetic field is resolved: although homogeneous above T-c, below T-c the DMS consists of ferromagnetic and paramagnetic regions of comparable volumes. In the ferromagnetic regions the local field inhomogeneity amounts to 0.03 T.
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页数:4
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