The effect of de-ionized water rinsing after immersion in hydrofluoric acid on the electrical conductivity of silicon nanomembranes

被引：1
|
作者：
Zhao, Xiang-Fu [1 ,2 ]
Han, Ping [1 ]
Guo, Qiang [2 ]
机构：
[1] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Semicond Mfg Int Corp, Tech & Ops Off, Shanghai 201203, Peoples R China
来源：
THIN SOLID FILMS | 2012年 / 520卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Electrical properties; X-ray photoelectron spectroscopy; Surfaces; Thin films; Silicon-on-insulator; Silicon; Membranes; Etching; THIN-FILM TRANSISTORS; 100; SURFACES; HF; SPECTROSCOPY; CHARGE;
D O I：
10.1016/j.tsf.2011.09.051
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrical conductivity of 28 and 220-nm thick silicon membranes was measured by the van der Pauw method in dry air (relative humidity <5%) at room temperature (around 20 degrees C). Immediately after hydrofluoric acid immersion the conductivity increases several orders of magnitude because of surface-induced band bending; it then drops and reaches the level of samples with a native oxide surface in several weeks due to the surface's re-oxidation. The oxidation rate is found to increase with the de-ionized water rinsing time, which is confirmed by X-ray photo electron spectroscopy measurements. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：2001 / 2003
页数：3
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