(Ba,Sr)TiO3 thin film growth in a batch processing MOCVD reactor

被引：15
|
作者：
Regnery, S [1 ]
Ehrhart, P
Fitsilis, F
Waser, R
Ding, Y
Jia, CL
Schumacher, M
Schienle, F
Juergensen, H
机构：
[1] EKM Forschungszentrum Julich, IFF, Julich, Germany
[2] Aixtron AG, Aachen, Germany
[3] MSF Forschungszentrum Julich, IFF, Julich, Germany
来源：
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2004年 / 24卷 / 02期
关键词：
BaTiO3 and titanates; capacitors; dielectric properties; electron microscopy; thin films;
D O I：
10.1016/S0955-2219(03)00235-8
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Thin films of different compositions within the (Ba-x,Sr1-x)TiO3 solid solution series were deposited in a planetary multi-wafer MOCVD reactor using different solutions of Sr(thd)(2), Ba(thd)(2) and Ti(O-i-Pr)(2)(thd)(2) precursors. Structural and electrical properties of Pt/BST/Pt MIM structures are presented. On the base of film thickness series ranging from 10 to 150 nm the electrical permittivity is discussed within the dead layer model. The performance of two different liquid precursor delivery systems, characterized by flash evaporation and liquid injection, respectively, are compared for the example of different SrTiO3 films. Finally, the growth of SrTiO3 on Pt(111) is compared with the growth on Si(100) and the electrical characteristics of the Pt/STO/Si MIS structures are discussed. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：271 / 276
页数：6
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