Silicon Spin Qubit Control and Readout Circuits in 22nm FDSOI CMOS

被引：0

作者：

Severino, Raffaele R. ^{[1
]}

Spasaro, Michele ^{[1
]}

Zito, Domenico ^{[1
]}

机构：

[1] Aarhus Univ, Dept Engn Elect & Comp Engn, Finlandsgade 22, DK-8200 Aarhus N, Denmark

来源：

2020 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2020年

基金：

欧盟地平线“2020”;

关键词：

Pulse generator; quantum dots; TIA; VCO; ELECTRON-SPIN; QUANTUM;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the implementation of microwave and mm-wave integrated circuits for control and readout of electron/hole spin qubits, as elementary building blocks for future emerging quantum computing technologies. In particular, it summarizes the most relevant readout and control techniques of electron/hole spin qubits, addresses the feasibility and reports some preliminary simulation results of two blocks: transimpedance amplifier (TIA) and pulse generator (PG). The TIA exhibits a transimpedance gain of 108.5 dB Omega over a -3dB bandwidth of 18 GHz, with input-referred noise current spectral density of 0.89 pA/root Hz at 10 GHz. The PG provides a mm-wave sinusoidal pulse with a minimum duration time of 20 ps.

引用

页数：5

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