High Efficiency non-toxic CuSbS2-based Heterojunction Solar Cell with TiO2 Electron Transport Layer

被引:0
|
作者
Das, Sandip [1 ]
Beltran, Alfred [1 ]
机构
[1] Kennesaw State Univ, Dept Elect Engn, Marietta, GA 30060 USA
关键词
CuSbS2; Copper Antimony Sulfide; Thin Film Solar Cell; Heterojunction Solar Cell; Numerical Simulation; SCAPS; TiO2; Electron Transport Layer;
D O I
10.1109/pvsc40753.2019.8981380
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We report on the design and photovoltaic characteristics of a thin-film solar cell using non-toxic CuSbS2 photoabsorber. The optimized device had a structure of Mo/p-CuSbS2/n-TiO2/ZnO:Al/ITO. Solar Cell Capacitance Simulator (SCAPS-1D) was used for all simulations in this study. The champion device exhibited a high open-circuit voltage (V-oc) of 1.07 V, a short-circuit current density (J(sc)) of 29.93 mA/cm(2), a fill factor (FF) of 87.7% leading to an efficiency of 28.06% with 3 mu m thick absorber layer. Our results clearly indicate the high potential of p-type CuSbS2 as an alternative photoabsorber material for thin film heterojunction solar cells.
引用
收藏
页码:1876 / 1879
页数:4
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