Evaluation and modeling of junction parameters in Cu(In, Ga)Se2 solar cells

Effective modeling of devices is a difficult challenge that can be greatly aided by the use of simulation codes such as AMPS, ADEPT and SCADS. Because of the large variety of device structures that we fabricate, we generate significant data and understanding that provides input for the model parameters. Fitting the range of measurements that we also perform adds additional constraints on model choices. Through these exercises we have identified the key defect parameters controlling performance in CIGS solar cells and are linking them to processing conditions. Insights to how surface and bulk properties can be independently optimized are also being developed and utilized.