Structural, Electronic, and Thermal Properties of CdSnAs2

被引:7
|
作者
Gunatilleke, Wilarachchige D. C. B. [1 ]
Hobbis, Dean [1 ]
Poddig, Hagen [1 ,2 ]
Tinkess, Austin [3 ]
Beekman, Matt [3 ]
Wang, Hsin [4 ]
Wei, Kaya [5 ]
Baumbach, Ryan E. [5 ,6 ]
Nolas, George S. [1 ]
机构
[1] Univ S Florida, Dept Phys, Tampa, FL 33620 USA
[2] Tech Univ Dresden, Fac Chem & Food Chem, D-01062 Dresden, Germany
[3] Calif Polytech State Univ San Luis Obispo, Dept Phys, San Luis Obispo, CA 93407 USA
[4] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
[5] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA
[6] Florida State Univ, Dept Phys, Tallahassee, FL 32310 USA
基金
美国国家科学基金会;
关键词
CHALCOPYRITE SEMICONDUCTORS; THERMOELECTRIC PROPERTIES; TRANSPORT-PROPERTIES; CRYSTAL-STRUCTURE; BAND-GAP; GROWTH;
D O I
10.1021/acs.inorgchem.9b03424
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Structural, electrical, and thermal properties of CdSnAs2, with analyses from temperature-dependent transport properties over a large temperature range, are reported. Phase-pure microcrystalline powders were synthesized that were subsequently densified to a high-density homogeneous polycrystalline specimen for this study. Temperature-dependent transport indicates n-type semiconducting behavior with a very high and nearly temperature independent mobility over the entire measured temperature range, attributed to the very small electron effective mass of this material. The Debye model was successfully applied to model the thermal conductivity and specific heat. This work contributes to the fundamental understanding of this material, providing further insight and allowing for investigations into altering this and related physical properties of these materials for technological applications.
引用
收藏
页码:3079 / 3084
页数:6
相关论文
共 50 条
  • [1] ELECTRONIC PROPERTIES OF CDSNAS2 AND CDSIAS2
    ALWARD, JF
    FONG, CY
    ELBATANOUNY, M
    WOOTEN, F
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 324 - 324
  • [2] PHOTOELECTRIC PROPERTIES OF CDSNAS2
    BATUKOVA, LM
    DANILOV, VI
    ZVONKOV, BN
    KARPOVICH, IA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (06): : 642 - 645
  • [3] PHOTOELECTRIC PROPERTIES OF CDSNAS2
    DOVLETMURADOV, C
    LEBEDEV, AA
    RUD, YV
    SERGINOV, M
    SKORYUKIN, VE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (12): : 1369 - 1371
  • [4] PREPARATION AND PROPERTIES OF CDSNAS2
    STRAUSS, AJ
    ROSENBERG, AJ
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 17 (3-4) : 278 - 283
  • [5] ELECTRICAL AND OPTICAL PROPERTIES OF CDSNAS2
    SPITZER, WG
    WERNICK, JH
    WOLFE, R
    SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 96 - 99
  • [6] PROPERTIES OF ZNSNAS2 AND CDSNAS2
    GASSON, DB
    PARROTT, JE
    JENNINGS, IC
    HOLMES, PJ
    MARATHE, BR
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (SEP) : 1291 - &
  • [7] INFLUENCE OF THE CU IMPURITY AND STRUCTURAL DEFECTS ON PROPERTIES OF CDSNAS2 COMPOUND
    VOYEVODINA, OV
    VYATKIN, AP
    VEDERNIKOVA, TV
    VOYEVODIN, VG
    KRIVOV, MA
    OTMAN, YI
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1980, (05): : 102 - 108
  • [8] SEMI-CONDUCTING PROPERTIES OF CDSNAS2
    MATYAS, M
    HOSCHL, P
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1962, 12 (10) : 788 - &
  • [9] ELECTRIC PROPERTIES OF HOMOEPITAXIAL FILMS CDSNAS2
    DANILOV, VI
    KARPOVICH, IA
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1984, 27 (12): : 87 - 89
  • [10] BIREFRINGENCE IN CDSNAS2
    KARYMSHAKOV, RK
    UKHANOV, YI
    SHMARTSE.YV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (02): : 298 - +