SEE Tests of the NAND Flash Radiation Tolerant Intelligent Memory Stack

被引：0
|
作者：
Bagatin, M. [1 ]
Gerardin, S. [1 ,2 ]
Paccagnella, A. [1 ,2 ]
Sellier, C. [3 ]
Wang, P. X. [3 ]
Ferlet-Cavrois, V. [4 ]
Poivey, C. [4 ]
机构：
[1] Univ Padua, Dipartimento Ingn Informaz, RREACT Grp, I-35100 Padua, Italy
[2] Ist Nazl Fis Nucl, Padua, Italy
[3] 3D PLUS, Bus, France
[4] TEC QEC, ESA ESTEC, Noordwijk, Netherlands
来源：
2015 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2015年
关键词：
D O I：
10.1109/REDW.2015.7336732
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
The NAND Flash Radiation-Tolerant Intelligent Memory Stack (RTIMS FLASH) was developed to allow designers of space applications to take advantage of the large density offered by Commercial-Off-The-Shelf NAND Flash, without having to deal with radiation-induced upsets and high-current events. It can be configured in three operating modes, offering different trade-offs in terms of upset protection vs memory size. The effectiveness of the RTIMS Flash was tested during two irradiation campaigns at the Heavy Ion Facility, in Louvain-la-Neuve, Belgium.
引用
收藏
页码：217 / 221
页数：5
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