Berry phase and Landau levels in epitaxial graphene

被引：0
|
作者：
Alisultanov, Z. Z. [1 ,2 ,3 ]
机构：
[1] Russian Acad Sci, Amirkhanov Inst Phys, Dagestan Sci Ctr, Makhachkala 367003, Russia
[2] Russian Acad Sci, Prokhorov Gen Phys Inst, Moscow 119991, Russia
[3] Dagestan State Univ, Makhachkala 367000, Russia
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2016年 / 30卷 / 21期
关键词：
Epitaxial graphene; Berry phase; Landau levels; quasi-classical approach; ELECTRIC-FIELDS; GAS; OSCILLATIONS; MONOLAYER; BILAYER; STATES; MODEL;
D O I：
10.1142/S0217979216501563
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Within the framework of a simple model, we investigated the Berry phase of epitaxial graphene (EG) formed on a semiconductor substrate. We have shown that this value is equal to pi near the Dirac point. This result is in complete agreement with the experimental data. We have shown that the Berry phase of epitaxial graphene may differ from pi far away from Dirac point. In addition, we investigated the Landau levels (LLs) in the epitaxial graphene within the framework of the semiclassical approach.
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页数：9
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