Structures and electronic states of gallium-acetone complexes: ab-initio DFT study

被引:4
|
作者
Tachikawa, H [1 ]
Kawabata, H
机构
[1] Hokkaido Univ, Grad Sch Engn, Div Mol Chem, Kita Ku, Sapporo, Hokkaido 0608628, Japan
[2] Osaka Univ, Venture Business Lab, Suita, Osaka 5650871, Japan
关键词
gallium-acetone complexes; ab-initio molecular orbital; DFT; electronic states;
D O I
10.1016/S0022-328X(03)00404-2
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The structures and electronic states of acetone-metal complexes (Ac-M, where M = Ga, Al, and 13) have been calculated by means of ab-initio DFT and configuration interaction (CI) calculations in order to shed light on the mechanism of the electron conductivity and doping effects. It was found that the electronic states of Ac-Ga and Ac-Al at the ground state are composed of ion-pair state expressed approximately by (Acdelta-)(Mdelta+): the electron is transferred from metal to the carbonyl group, suggesting that the carbonyl compound interacting with Ga and At behaves as an n-type semiconductor. In the case of the Ac-B complex, on the other hand, the electron on Ac is significantly transferred to the boron atom, expecting that hole is transferred in the boron-doped carbonyl compound (p-type semiconductor). In these complexes, the first electronic transition is a charge-transfer band between metal and carbonyl group. The mechanism of the electronic conductivity was discussed on the basis of theoretical results. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:56 / 60
页数:5
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