Development and evaluation of semi-insulating GaAs detectors in hot plasmas diagnostics

被引：8
|
作者：
Zatko, Bohumir [1 ]
Dubecky, Frantisek [1 ]
Bohacek, Pavol [1 ]
Huran, Jozef [1 ]
Necas, Vladimir [2 ]
Ryc, Leszek [3 ]
机构：
[1] Slovak Acad Sci, Inst Elect Engn, SK-84104 Bratislava, Slovakia
[2] Slovak Tech Univ Bratislava, Fac Elect Engn & Informat Technol, SK-81219 Bratislava, Slovakia
[3] Inst Plasma Phys & Laser Microfus, PL-00908 Warsaw, Poland
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2011年 / 633卷
关键词：
Hot plasma; Semi-insulating GaAs; Detectors; Spectrometry; X-rays; RADIATION DETECTORS; PERFORMANCE;
D O I：
10.1016/j.nima.2010.06.145
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
This work deals with the evaluation of semi-insulating (SI) GaAs radiation detector applicable in the spectrometry of "soft" X-rays (1-20 key) emitted by hot plasmas and evaluation of its performance. SI GaAs detector with thin base and sandwich electrodes configuration was fabricated. The detector chip was mounted onto common support together with the input external JFET and feedback elements and cooled down to 255 K by Peltier cooler. The first JFET stage was connected to the PR307SF hybrid charge-sensitive preamplifier. The shaping amplifier was assembled from the set of CREMAT hybrid circuits allowing variation of the shaping time (0.25-8.0 mu s). The detector performance was evaluated by the measurement of the (241)Am pulse-height spectra. Observed results are demonstrated and discussed. (c) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：S131 / S133
页数：3
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