An optoelectronic switch based on a triangular-barrier structure

被引：9
|
作者：
Guo, DF [1 ]
机构：
[1] Chinese Air Force Acad, Dept Elect Engn, Kangshan, Taiwan
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1998年 / 34卷 / 10期
关键词：
avalanche multiplication; carrier confinement; negative differential resistance; optoelectronic switch; triangular barrier;
D O I：
10.1109/3.720223
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A GaAs-InaGaP triangular-barrier optoelectronic switch, grown by metalorganic chemical vapor deposition (MOCVD), is reported in this paper. Owing to the avalanche multiplication and hole confinement in the device operation, S-shaped negative-differential-resistance (NDR) performances are observed in the current-voltage (I-V) characteristics under both normal and reverse operation modes. The device also showed a flexible optical function related to the potential barrier height controllable by incident light. The dependency of the carrier transport mechanism on illumination, as well as the I-V characteristics at different temperatures, are investigated.
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页码：1882 / 1885
页数：4
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