Imaging mechanism of piezoresponse force microscopy in capacitor structures

被引：51

作者：

Kalinin, Sergei V. ^{[1
,2
]}

Rodriguez, Brian J. ^{[1
,2
]}

Kim, Seung-Hyun ^{[3
]}

Hong, Suk-Kyoung ^{[4
]}

Gruverman, Alexei ^{[5
]}

Eliseev, Eugene A. ^{[6
]}

机构：

[1] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

[2] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

[3] INOSTEK Inc, Gyeonggi 426901, South Korea

[4] Hynix Semicond Inc, Incheon Si 467701, Kyoungki Do, South Korea

[5] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

[6] Natl Acad Sci Ukraine, Inst Problems Mat Sci, UA-03142 Kiev, Ukraine

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期

关键词：

Domain walls - Electrodes - Polarization;

D O I：

10.1063/1.2905266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The image formation mechanism in piezoresponse force microscopy (PFM) of capacitor structures is analyzed. We demonstrate that the spatial resolution is a bilinear function of film and top electrode thicknesses and derive the corresponding analytical expressions. For many perovskites, the opposite contributions of d(31) and d(33) components can result in anomalous domain wall profiles. This analysis establishes the applicability limits of PFM for polarization dynamics studies in capacitors and applies them to other structural probes, including focused x-ray studies of capacitor structures. (c) 2008 American Institute of Physics.

引用

页数：3

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