Deep-level electroluminescence at 3.5 μm from semi-insulating InP layers ion implanted with Fe

被引：10
|
作者：
Troccoli, M
Scamarcio, G
Fraboni, B
Priolo, F
Gasparotto, A
机构：
[1] Univ Bari, Ist Nazl Fis Mat, I-70126 Bari, Italy
[2] Univ Bari, Dipartimento Fis, I-70126 Bari, Italy
[3] Univ Bologna, Dipartimento Fis, I-40137 Bologna, Italy
[4] Univ Bologna, Ist Nazl Fis Mat, I-40137 Bologna, Italy
[5] Univ Catania, Dipartmento Fis, I-95129 Catania, Italy
[6] Univ Catania, Ist Nazl Fis Mat, I-95129 Catania, Italy
[7] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy
[8] Univ Padua, Ist Nazl Fis Mat, I-35131 Padua, Italy
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2001年 / 16卷 / 01期
关键词：
D O I：
10.1088/0268-1242/16/1/101
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Mid-infrared electroluminescence associated with internal transitions of Fe2+ deep levels in semi-insulating InP:Fe layers, obtained by ion implantation at high doses in the range 10(13)-10(15) cm(-2), is reported. The characteristic line spectrum corresponding to the symmetry-allowed d-shell transitions of Fe2+ can be observed up to 30 K, while a broader band emission is detectable up to 200 K. The estimated conversion efficiency of electrical into mid-IR optical power is similar to4 x 10(-5), a factor of similar to 40 larger than previously reported values in MOCVD-grown planar electroluminescent devices.
引用
收藏
页码：L1 / L3
页数：3
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