Thickness-dependent electronic structure of ultrathin SrRuO3 films studied by in situ photoemission spectroscopy -: art. no. 162508

被引：121

作者：

Toyota, D ^{[1
]}

Ohkubo, I

Kumigashira, H

Oshima, M

Ohnishi, T

Lippmaa, M

Takizawa, M

Fujimori, A

Ono, K

Kawasaki, M

Koinuma, H

机构：

[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

[3] Univ Tokyo, Dept Phys, Kashiwa, Chiba 2778561, Japan

[4] Univ Tokyo, Dept Complex Sci & Engn, Kashiwa, Chiba 2778561, Japan

[5] KEK, Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, Japan

[6] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[7] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 16期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2108123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ thickness-dependent photoemission spectroscopy (PES) has been performed on SrRuO3 (SRO) layers deposited on SrTiO3 substrates to study the structure-induced evolution of the electronic structure. The PES spectra showing the existence of two critical film thicknesses reveal that a metal-insulator transition occurs at a film thickness of 4-5 monolayers (ML) and the evolution of Ru 4d-derived states around the Fermi level (E-F) saturates at about 15 ML. The observed spectral behavior well matches the electric and magnetic properties and thickness-dependent evolution of surface morphology of the ultrathin SRO films. These experimental results suggest the importance of the disorder associated with the unique growth-mode transition in SRO films. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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